sep. 2009 1 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type i c ............................................................... 1800 a v ces ...................................................... 1700 v insulated type 1-element in a pack aisic baseplate t rench gate igbt : cstbt tm soft reverse recovery diode application t raction drives, high reliability converters / inverters, dc choppers CM1800HCB-34N outline drawing & circuit diagram dimensions in mm 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules circuit diagram screwing depth min. 16.5 screwing depth min. 7.7 e c e c e c e g c label c e g c e cm ee cc 3 - m4 nuts 6 - m8 nuts 38 +1 0 28 +1 0 +0.1 ?.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 0.1 0.3 0.3 29.5 5 13 61.5 61.5 140 124 0.1 0.5 0.2 0.15 0.5 40 79.4 20.25 57 0.1 5.2 40 15 41.25 57 0.1 20 8 - 7 mounting holes 171 0.1 190 0.5 57 0.1
sep. 2009 2 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules maximum ratings symbol item conditions ratings unit v ces v ges i c i cm i e i em p c v iso t j t op t stg t psc collector-emitter voltage gate-emitter voltage collector current emitter current (note 2) maximum power dissipation (note 3) isolation voltage j unction temperature operating temperature storage temperature maximum short circuit pulse width v ge = 0v, t j = 25 c v ce = 0v, t j = 25 c dc, t c = 90 c pulse (note 1) dc pulse (note 1) t c = 25 c, igbt part rms, sinusoidal, f = 60hz, t = 1 min. v cc = 1000v, v ce v ces , v ge = 15v, t j = 125 c 1700 20 1800 3600 1800 3600 13800 4000 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 10 v v a a a a w v c c c s electrical characteristics symbol item conditions t j = 25 c t j = 125 c 5.5 6.0 6.5 352 19.2 5.6 24.4 2.00 2.20 0.56 0.50 2.10 1.75 700 0.44 8 16 7.5 0.5 2.60 1.50 0.60 3.00 0.60 2.90 1.50 ty p limits max min unit i ces v ge(th) i ges c ies c oes c res q g v ce(sat) t d(on) t r e on(10%) t d(off) t f e off(10%) v ec t rr q rr e rec(10%) collector cutoff current gate-emitter threshold voltage gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge collector-emitter saturation v oltage tu r n-on delay time tu r n-on rise time tu r n-on switching energy (note 5) tu r n-off delay time tu r n-off fall time tu r n-off switching energy (note 5) emitter-collector voltage (note 2) reverse recovery time (note 2) reverse recovery charge (note 2) reverse recovery energy (note 2), (note 5) v ce = v ces , v ge = 0v v ce = 10 v, i c = 180 ma, t j = 25 c v ge = v ges , v ce = 0v, t j = 25 c v ce = 10 v, v ge = 0 v, f = 100 khz, t j = 25 c v cc = 900 v, i c = 1800 a, v ge = 15 v, t j = 25 c i c = 1800 a (note 4) v ge = 15 v v cc = 900 v, i c = 1800 a, v ge = 15 v r g(on) = 0.9 ? , t j = 125 c, l s = 80 nh inductive load v cc = 900 v, i c = 1800 a, v ge = 15 v r g(off) = 1.3 ? , t j = 125 c, l s = 80 nh inductive load i e = 1800 a (note 4) v ge = 0 v v cc = 900 v, i e = 1800 a, v ge = 15 v r g(on) = 0.9 ? , t j = 125 c, l s = 80 nh inductive load ma v a nf nf nf c v s s j/p s s j/p v s c j/p t j = 25 c t j = 125 c t j = 25 c t j = 125 c hvigbt (high voltage insulated gate bipolar transistor) modules
sep. 2009 3 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules thermal characteristics symbol item conditions 7.0 9.0 13.0 ty p limits max min unit r th(j-c)q r th(j-c)r r th(c-f) thermal resistance thermal resistance contact thermal resistance j unction to case, igbt part j unction to case, fwdi part case to fin, g rease = 1w/m?, d (c-f) = 100 m k/kw k/kw k/kw mechanical characteristics symbol item conditions 7.0 3.0 1.0 600 19.5 32.0 1.5 10 0.18 13.0 6.0 2.0 ty p limits max min unit m t m s m t m cti d a d s l p ce r cc?ee mounting torque mass comparative tracking index clearance creepage distance pa r asitic stray inductance internal lead resistance m8: main terminals screw m6: mounting screw m4: auxiliary terminals screw t c = 25 c n? n? n? kg mm mm nh m ? note 1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating (125 c). 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 3. junction temperature (t j ) should not exceed t jmax rating (150 c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt.
sep. 2009 4 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector-emitter voltage ( v ) collector current ( a ) transfer characteristics ( typical ) gate-emitter voltage ( v ) collector current ( a ) collector-emitter saturation voltage ( v ) collector-emitter saturation voltage characteristics ( typical ) emitter-collector voltage ( v ) emitter current ( a ) free-wheel diode forward characteristics ( typical ) collector current ( a ) 0 1000 2000 3000 4000 01 3 245 6 01234 0 02 6 4810 12 0 0 01234 1000 2000 3000 4000 1000 2000 3000 4000 1000 2000 3000 4000 t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c v ge = 15v v ce = 20v t j = 125 c v ge = 8v v ge = 20v v ge = 10v v ge = 12v v ge = 15v
sep. 2009 5 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules 0 0.5 1.0 1.5 2.0 2.5 0 1000 2000 3000 4000 0 0.5 1.0 1.5 2.0 2.5 3.0 012345 6 0102 03040 10 0 10 -1 23 57 10 1 10 2 23 57 23 57 capacitance characteristics ( typical ) collector-emitter voltage ( v ) capacitance ( nf ) gate charge characteristics ( typical ) gate charge ( c ) gate-emitter voltage ( v ) collector current ( a ) switching energies ( j/p ) half-bridge switching energy characteristics ( typical ) -15 -10 -5 0 5 10 15 20 half-bridge switching energy characteristics ( typical ) gate resistance ( ? ) switching energies ( j/p ) v cc = 900v, i c = 1800a v ge = 15v, t j = 125 c inductive load 10 3 10 4 10 2 10 1 10 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ce = 900v, i c = 1800a t j = 25 c e rec e off c ies c oes c res v cc = 900v, v ge = 15v r g (on) = 0.9 ? , r g (off) = 1.3 ? t j = 125 c, inductive load e on v ge = 0v, t j = 25 c f = 100khz e rec e off e on
sep. 2009 6 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules collector current ( a ) switching times ( s ) half-bridge switching time characteristics ( typical ) emitter current ( a ) reverse recovery time ( s ) free-wheel diode reverse recovery characteristics ( typical ) reverse recovery current ( a ) 10 4 10 3 10 1 10 -1 10 0 10 1 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 2 2 3 5 7 2 3 5 7 10 2 4 23 57 4 23 57 10 4 10 3 10 2 4 23 57 4 23 57 10 4 10 3 10 1 10 2 10 0 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 time ( s ) transient thermal impedance characteristics normalized transient thermal impedance 1.2 1.0 0.8 0.6 0.4 0 0.2 t d(off) t d(on) t f t r v cc = 900v, v ge = 15v r g (on) = 0.9 ? , r g (off) = 1.3 ? t j = 125 c, inductive load v cc = 900v, v ge = 15v r g (on) = 0.9 ? , t j = 125 c inductive load l rr t rr r th(j?)q = 9.0k/kw r th(j?)r = 13.0k/kw
sep. 2009 7 mitsubishi hvigbt modules CM1800HCB-34N high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules collector-emitter voltage ( v ) collector current ( a ) reverse bias safe operating area ( rbsoa ) 0 5000 10000 15000 20000 25000 30000 collector-emitter voltage ( v ) collector current ( a ) short circuit safe operating area (scsoa) collector-emitter voltage ( v ) reverse recovery current ( a ) free-wheel diode reverse recovery safe operating area ( rrsoa ) 0 500 1000 1500 2000 500 1000 1500 2000 0 0 0 1000 2000 3000 4000 5000 0 500 1000 1500 2000 500 1000 1500 2000 2500 v cc 1200v, di/dt 8000a/ s t j = 125 c v cc 1000v, v ge = 15v r g (on) 0.9 ?, r g (off) 1.3 ? t j = 125 c, tpsc 10 s v cc 1200v, v ge = 15v t j = 125 c, r g (off) 1.3 ?
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